Title of article
SiH and GeH chemical vapor deposition of GeSirGe 4 4 heterostructures
Author/Authors
Shulin Gu )، نويسنده , , Xunming Zhu، نويسنده , , Ning Jiang، نويسنده , , Yi Shi، نويسنده , , Rong Zhang، نويسنده , , Youdou Zheng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
28
To page
30
Abstract
The deposition of GeSi alloys on Ge substrate by Rapid Thermal Process, Very Low Pressure CVD method has been
studied. The growth rate of the GeSi alloy increases as the Si atoms are incorporated into the GeSi alloy at a proper
temperature. The high substrate temperature will cause the Si fraction and the GeSi growth rate to increase.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991639
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