Title of article
Scanning tunneling spectroscopy of indium tin oxide film in air
Author/Authors
S Kasiviswanathan، نويسنده , , V Srinivas، نويسنده , , A.K Kar، نويسنده , , B.K. Mathur، نويسنده , , K.L. Chopra، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
399
To page
401
Abstract
Scanning tunneling spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films in air. The spectroscopic data exhibit chatacteristics typical of metal-insulator-semiconductor structure, with a heavily doped semiconductor. The measurements have yielded a band gap of about 3.5 eV, which is very close to the bulk value.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991688
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