Initial stage of ultra-thin SiO, formation at low temperatures using activated oxygen

The initial stage of oxidation of Si by activated oxygen species is investigated in detail based on the measurements by XPS. Thin SiO, films were found to grow following the parabolic law and the estimated activation energy of the oxidation rate was about one order of magnitude smaller than that in the thermal oxidation case in a substrate temperature range of 300-5OO”C, which shows the activated oxgen enhanced the oxidation process. The obtained oxidation rate of a lo-*-lo-’ nm/min range is appropriate to realize the atomically controlled interface formation.