Title of article
Quantum chemical study on low energy reaction path for SiH, + O(‘D) --+ SiO + 2H,
Author/Authors
Akitomo Tachibana، نويسنده , , Ken Sakata، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
7
From page
151
To page
157
Abstract
One of the methods to produce SiO, layer over the Si surface is the chemical vapor deposition (CVD) by using oxygen
gas and silane gas. But little is known about the mechanism of this oxidation reaction not only on the surface but also in the
gas phase. In this paper, we take up the gas phase reaction between singlet oxygen (‘D) and silane. Applying quantum
chemical method, a low energy reaction path is found in addition to the excited state reaction path. This agrees well with the
experimental observation for the vibrational energy distribution of product SiO by laser-induced fluorescence (LIF).
Keywords
SiO , CVD , reaction , quantum chemistry , Single oxygen
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991776
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