Title of article :
Quantum chemical study on low energy reaction path for SiH, + O(‘D) --+ SiO + 2H,
Author/Authors :
Akitomo Tachibana، نويسنده , , Ken Sakata، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
7
From page :
151
To page :
157
Abstract :
One of the methods to produce SiO, layer over the Si surface is the chemical vapor deposition (CVD) by using oxygen gas and silane gas. But little is known about the mechanism of this oxidation reaction not only on the surface but also in the gas phase. In this paper, we take up the gas phase reaction between singlet oxygen (‘D) and silane. Applying quantum chemical method, a low energy reaction path is found in addition to the excited state reaction path. This agrees well with the experimental observation for the vibrational energy distribution of product SiO by laser-induced fluorescence (LIF).
Keywords :
SiO , CVD , reaction , quantum chemistry , Single oxygen
Journal title :
Applied Surface Science
Serial Year :
1997
Journal title :
Applied Surface Science
Record number :
991776
Link To Document :
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