Exact evaluation of channel mobility for tr

We evaluated the channel mobility (CL,) for the trench MOSFET with sidewall faces of (100) and (110) using both a drain current method and a split C-V method and compared the results obtained by both methods. The values of pert did not decrease for both samples towards a low electric field in the case of applying the former method but it decreased in the case of applying the latter method. Furthermore, the absolute values of /.~~rr are much higher in the case of applying the former method than those in the case of applying the latter method. These results strongly suggest that the latter method is much superior to the former one in evaluating pen for the trench MOSFET which might have a large quantity of interface states.