FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO,/Si(OOl) induced by thick SiO, formation

Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (- 1 pm-period, - 1.5 nm-height) at SiO,/Si(OOl> interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (- 150 nm) thermal oxide or a chemical oxide made in HNO, solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface.