Title of article
FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO,/Si(OOl) induced by thick SiO, formation
Author/Authors
Kenji Namba * ، نويسنده , , Tadahiro Komeda، نويسنده , , Yasushiro Nishioka، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
198
To page
201
Abstract
Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements
showed the existence of long periodical mound and valley shape (- 1 pm-period, - 1.5 nm-height) at SiO,/Si(OOl>
interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (- 150
nm) thermal oxide or a chemical oxide made in HNO, solution. Fourier transform infrared spectroscopic (FTIR)
measurements of the interfaces indicated the atomic scale roughness of the interface.
Keywords
FTIR , STM , Microroughness , Sacrificing oxidation , Step structures , Si(OO1)
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991784
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