Electrical reliability and structural inhomogeneity of thermally grown SiO,

We discuss the electrical reliability and the spectral shape of the infrared absorption in SiO, and then using the percolation theory, present a new theoretical approach to the dielectric breakdown. We show the significant oxide thickness dependence of oxide deteriorations and a universal temperature dependence of the charge-to-breakdown, irrespective of the injection polarity or the oxide growth condition. On the other hand, the thickness dependence of IR absorption spectra indicates a spectral shape broadening into the lower energy near the Si/SiO, interface. These findings are physically investigated and, using the percolation theory, incorporated into a breakdown model of the a-SiO, with randomly distributed bond strength.