Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr,.,Ti,.,O, films on Si(ll1) substrates using CeO, buffer layers

We demonstrate the ferroelectric behavior of PZT films grown on Si(ll1) substrates by using CeO, buffer layer. PZT (90 nm) films were prepared by electron beam assisted vacuum evaporation system and CeO, (27 nm) films were prepared by MBE (molecular beam epitaxy). It is found that a hysteresis is not shown in the capacitance-voltage (C-V) characteristics of CeO,/Si structures, whereas a hysteresis is obtained in the C-V plot of PZT/CeO,/Si structures, which is due to the ferroelectric nature of the PZT film. In addition, it is shown that the leakage current of PZT/CeO,/Si is as low as lo-’ A/cm* at 8 V