Interface control of Pb(ZrxTi1 − x)O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

The interface between a PZT film and an Si(100) substrate was controlled by using a heteroepitaxial YSZ buffer layer. A 10 nm thick YSZ buffer layer was able to prevent the PZT film from reacting with the Si substrate at the substrate temperature of 650°C and produced the highly c-axis-oriented perovskite PZT film. The polarization-voltage hysteresis measurement showed that the PZT/YSZ/Si structure had ferroelectric properties although the leakage current was relatively large. From the results of the capacitance-voltage and the current-voltage characteristics, it was speculated that this structure had the crystalline defects or carrier traps which generated large absorption current with short relaxation time constants.