Photo-induced effects on point defect behavior in plasma-irradiated GaAs

We studied minority carrier injection effects on point defect behavior in plasma-irradiated GaAs using light illumination combined with MA. We found that reactivation of inactivated Si donors by plasma-irradiation is greatly enhanced by minority carrier injection. The mechanism is discussed in terms of the charge conversion of point defects induced by minority carrier injection. These findings are of great importance from the viewpoint of producing a new method to control defects as well as giving new insight into the plasma-induced point defects at issue.