Development of single-ion implantation - controllability of implanted ion number

The current status of developing single-ion implantation (SII) which enables us to implant dopant ions one by one into fine semiconductor regions is summarized. Single-ions extracted from a focused ion beam (FIB) have been implanted into a nuclear track detector CR-39 and the average number of implanted ions by chopping the ion beam has been evaluated by counting the etch pits on the CR-39 formed by each single-ion incidence. The detection efficiency of the single-ion incidence into a target has also been evaluated by comparing the count of secondary electrons and the implanted ion number, and the controllability of implanted ion number by SII is discussed.