• Title of article

    A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

  • Author/Authors

    Jie Cui * ، نويسنده , , Masashi Ozeki، نويسنده , , Masafumi Ohashi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    7
  • From page
    739
  • To page
    745
  • Abstract
    The scattering properties of tertiarybutylarsine (TBAs) on c(4 X 4), 2 X 4 GaAs(001) surfaces were studied by supersonic-molecular beam scattering. Polar angle measurement showed that the scattering signal was contributed from thermal desorption of trapped molecules combined with the direct-inelastic scattering. The sticking coefficient measurement revealed that the scattering behavior was very different for c(4 X 4) and 2 X 4 initial surface reconstructions. It is concluded that TBAs molecules can non-dissociatively chemisorb on c(4 X 4) through precursor-mediated mechanism, and physisorb on 2 X 4 surface. The desorption of TBAs molecule from the chemisorbed well was observed at higher temperatures above 400 K. The activation energies of the desorption (10.9 and 7.7 kcal/mol) are small reflecting that the TBAs molecular chemisorption wells are shallow.
  • Keywords
    Semiconductor surface , Supersonic molecular beam , Precursor-mediated adsorption , C&As , TBAs , Direct-inelastic scattering
  • Journal title
    Applied Surface Science
  • Serial Year
    1997
  • Journal title
    Applied Surface Science
  • Record number

    991881