Title of article :
A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces
Author/Authors :
Jie Cui * ، نويسنده , , Masashi Ozeki، نويسنده , , Masafumi Ohashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
7
From page :
739
To page :
745
Abstract :
The scattering properties of tertiarybutylarsine (TBAs) on c(4 X 4), 2 X 4 GaAs(001) surfaces were studied by supersonic-molecular beam scattering. Polar angle measurement showed that the scattering signal was contributed from thermal desorption of trapped molecules combined with the direct-inelastic scattering. The sticking coefficient measurement revealed that the scattering behavior was very different for c(4 X 4) and 2 X 4 initial surface reconstructions. It is concluded that TBAs molecules can non-dissociatively chemisorb on c(4 X 4) through precursor-mediated mechanism, and physisorb on 2 X 4 surface. The desorption of TBAs molecule from the chemisorbed well was observed at higher temperatures above 400 K. The activation energies of the desorption (10.9 and 7.7 kcal/mol) are small reflecting that the TBAs molecular chemisorption wells are shallow.
Keywords :
Semiconductor surface , Supersonic molecular beam , Precursor-mediated adsorption , C&As , TBAs , Direct-inelastic scattering
Journal title :
Applied Surface Science
Serial Year :
1997
Journal title :
Applied Surface Science
Record number :
991881
Link To Document :
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