Exfoliation process of InP caused by 1H and 4He ion implantation and its correlation with ion range parameters

Exfoliation of crystalline InP by 0.6–2.1 MeV 1H and 1.0–2.6 MeV 4He ion implantation at random orientation has been studied. The correlation between the depth of the produced craters and ion range parameters has been established by measuring the implanted 4He ion depth and defect distributions by elastic 1H backscattering and 4He ion channelling methods, respectively. The measurements indicate that the produced crater depths correlate with maximum ion range values. The modal range values of the implanted 4He ions were determined from the depth profiles obtained by the elastic proton backscattering technique. The crater depths deviate from the modal ranges by 9% to 3% for 1.0 to 2.5 MeV implanted 4He ions. The deduced ranges are in good agreement with the simulated values obtained by the Monte Carlo calculations. q1997 Elsevier Science B.V.