Title of article
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates
Author/Authors
D.M. Tricker، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
22
To page
27
Abstract
When epitaxial GaN is grown on (001) and View the MathML source oriented GaAs and GaP substrates by MBE, pits are found to develop in the substrate. Complementary cross-sectional and plan view transmission electron microscopical observations confirm the crystallographic nature of these voids which are considered to form by sourcing of Ga from the substrate during the first stages of epitaxy.
Keywords
High resolution electron microscopy , MBE , GaAs , Transmission electron microscopy , Pitting , GaN , Gap
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992114
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