Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry

Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry (SE) is discussed. The SE data of SIMOX wafers were analyzed using optical constants of SiO2 and Si and considering a thickness fluctuation in the buried SiO2 layer. From the analysis of data with model dielectric functions, it has been shown that the use of optical constants of bulk-Si for top-Si layer of SIMOX is suitable. It has also been demonstrated that the previously proposed empirical dielectric function [J. Appl. Phys. 77 (1995) 4673] is very useful in the interpretation of optical properties of amorphous materials.