Electrical and optical properties of carbon-tin films plasma-deposited from tetramethyltin in a three-electrode reactor

Electronic properties of amorphous hydrogenated carbon-tin films (a-SnxCy:H) plasma-deposited in a three-electrode reactor have been investigated. It has been found that small changes in the parameter V(−), describing the ion impact energy in the deposition process, cause a drastic change in the electronic structure of the films. This effect is attributed to the amorphous insulator-amorphous semiconductor transition. To understand the nature of the transition effect better, investigations of a structure transformation process, taking place in the semiconducting films under the influence of oxygen, have been performed.