Interaction between As and InP(110) studied by high resolution core level photoemission

Arsenic deposition on InP(110) was studied by means of high-resolution core level photoemission. By systematic spectral decompositions it was found that the adsorption at room temperature is non-reactive. At elevated temperatures (above 300°C) the As 3d spectra show drastic transformations, indicative of an Assingle bondP exchange reaction.