Sb on GaAs(110) structure studied by direct methods and chemical-shift photoelectron diffraction

We have determined the two unequivalent adsorption sites of Sb in the GaAs(110)p(1 × 1)-Sb(1 ML) surface by evaluating a simple Fourier transform of scanned-energy photoelectron diffraction data corresponding to chemically shifted Sb 4d core levels. Our results show, in a model-independent procedure, that the atomic geometry of the p(1 × 1)Sb overlayer contradicts various models proposed for this surface and is consistent only with the epitaxial continued layer structure (ECLS).