Differences between silicon oxycarbide regions at SiCsingle bondSiO2 prepared by plasma-assisted oxidation and thermal oxidations

The initial stages of SiCsingle bondSiO2 interface formation by low temperature (300°C) remote plasma assisted oxidation (RPAO) have been studied by on-line Auger electron spectroscopy (AES) for flat and vicinal 6H SiC(0001) wafers with Si(0001) and C faces (0001), focusing on (i) interfacial bonding and (ii) oxidation rates for thickness up to about 2 nm.