Abstract :
Transition regions at Sisingle bondSiO2 interfaces contain su☐ide bonding arrangements which contribute to interface roughness and may give rise to electronically active defects. Interfacial transition regions with su☐ide bonding are a direct result of thermal and plasma-assisted oxidation at temperatures up to at least 800°C, but sub-oxide bonding is significantly reduced following a 30 s, 900°C RTA. The kinetics of annealing are essentially the same as those for separation of homogeneous sub-oxide thin films (SiOx, x < 2) into silicon nanocrystals and stoichiometric SiO2.
