Title of article :
From CdTe/Fe schottky barrier to Cd1−xFexTe semimagnetic semiconductor
Author/Authors :
B.A. Orlowsk، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
5
From page :
631
To page :
635
Abstract :
Synchrotron radiation tuned to the Fe 3p–3d transition (hv = 56eV) was used to study Fano type resonant photoemission spectra for a clean CdTe(110) surface sequentially covered in the monolayer (ML) range by Fe atoms and annealed. The results showed that, in the first stage of the deposition, the Fe atoms are mainly involved in the creation of a Cd1−xFexTe ternary crystal (0.2–0.6 ML). At higher coverages (1.2 ML), the contribution of Fe metallic islands becomes visible. CdTe dissociation in the surface region leads to the appearance of Cdsingle bondFe interaction at higher Fe deposition (3.6 ML). After deposition of 20 ML, sample annealing in the 300°C range leads to Fe diffusion into the crystal and the measured spectra correspond well to the Cd1−xFexTe calculated spectra.
Keywords :
Semimagnetic semiconductors , Resonant photoemission , Schottky barrier formation
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992281
Link To Document :
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