Theory of quantum dot formation in Stranski-Krastanov systems

The formation of coherent three-dimensional (3D) islands during Stranski-Krastanov growth of semiconductors is modelled with rate equations. Effects of strain are included in the growth rate of two-dimensional (2D) islands (atop a wetting layer) and in the transformation of 2D into 3D islands. Comparisons with measured 3D island densities for InP grown on GaP-stabilised GaAs(001) by metalorganic vapor-phase epitaxy are used to parametrize the model and to identify the rate-determining steps for 3D island formation.