Abstract :
The growth of oriented crystalline PZT films on 111.Si substrates at different substrate temperatures is reported. By
varying the laser fluence and other deposition parameters we have been able to produce, in a single-step process, highly
oriented PZT films with good piezoelectric properties at much lower temperatures than reported in other PLD experiments.
X-ray measurements and secondary ion mass spectroscopy, as well as piezoelectric measurements, are used to characterize
the different samples. Experimental evidence is presented that at high laser fluence 25 Jrcm2. better properties for PLD
films are obtained with lower substrate temperatures. q1998 Elsevier Science B.V.