Abstract :
GaN thin films were deposited by laser ablation of liquid Ga target in nitrogen reactive atmosphere. An Nd-YAG laser
ls1.06 mm, t FWHMs10 ns.of 0.35 J energyrpulse was used as laser source. The nitrogen pressure was varied in the
range of 10y2 to 10y1 mbar. As substrates, we used 0001.sapphire plates and 100.Si wafers, coated or uncoated with
ZnO as buffer layers, and heated below 3008C. Different analysis techniques evidenced the characteristics of the deposited
films. SIMS profiles corresponding to N and Ga in-depth distribution carried out the presence of layers of the order of
130–150 nm, with uniform distribution of Ga and N inside the layer. XPS studies evidenced the Ga–N bonding. The N1s
signal contains as main peak the one centered at 397.3 eV and corresponding to Ga–N bond. From the distance between the
photoelectron Ga 3d peak and the Auger Ga LMM peak, the calculated Auger parameter of 1083.9 eV corresponds to the
one reported in literature for GaN compound 1084.05 eV.. Both techniques evidenced an oxygen contamination below 5%.
XRD recorded spectra show the presence of a peak assigned to 002. GaN crystalline orientation. Optical absorption
spectroscopy studies in the UV–visible range evidenced a high transparency over 80% transmission.for the deposited films.
The energy band gap obtained from the absorption spectra was found to be larger than 3.6 eV. q1998 Elsevier Science B.V.
