Title of article
Preparation of amorphous organic semiconductor thin films with polyperinaphthalene structure on temperature-controlled substrates by excimer laser ablation of 3,4,9,10-perylenetetracarboxylic dianhydride
Author/Authors
Satoru Nishio، نويسنده , , Ryoko Mase، نويسنده , , Tetsuya Oba، نويسنده , , Akiyoshi Matsuzaki، نويسنده , , Hiroyasu Sato، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
589
To page
594
Abstract
Amorphous semiconducting organic thin films are prepared on temperature-controlled substrates by excimer laser
ablation ELA.of 3,4,9,10-perylenetetracarboxylic dianhydride PTCDA.with 308 nm XeCl.beams. Drastic increase in
electric conductivity and decrease in the FT-IR peak intensities related to the side groups of PTCDA monomers are observed
for films prepared on substrates above 2008C. Electric conductivity of a film prepared on a substrate at 3008C comes up to
10y1 S cmy1. Raman spectroscopic measurement reveals that this film partially contains polyperinaphthalene PPN.
structure. Structural change by increasing substrate temperature and film formation process are discussed. q1998 Elsevier
Science B.V.
Keywords
ablation , excimer laser , 3 , 4 , 9 , 10-Perylenetetracarboxylic dianhydride , Polyperinaphthalene , Amorphous organic semiconductor , thin films
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992491
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