Abstract :
A new π-bonded-chain-stacking-fault (π-SF) model is proposed for the Si(111)4×1–In surface structure. The model incorporates 4×1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted–unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 monolayer) reside above sixfold and fivefold Si rings, while sevenfold Si rings form π-bonded chains between In ridges.
Keywords :
Atom-solid interactions , Silicon , Indium , Surface structure , morphology , Roughness , and topography , Auger electron spectroscopy (AES) , Low energy electron diffraction (LEED) , Scanning tunnelling microscopy (STM)
