Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content

We achieved the atomic-layer-deposition of SiO2 with an extremely low H content for the first time by using Si NCO.4 . and N C H . The deposition rate was independent of the exposure times of both sources. The saturated deposition rate 2 5 3° was about 1.2 Arcycle at 1508C. AFM observation revealed that the increase of roughness after 50 deposition cycles was only about 0.4 A° in root mean square. The FT-IR spectra showed that the deposited film was SiO2 without Si–H, Si–OH or NCO bond. q1998 Elsevier Science B.V. All rights reserved