Title of article :
Hydrogen terminated Si 111/surface studied by RHEED
Author/Authors :
N.L. Yakovlev، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Abstract :
A hydrogen terminated Si 111. surface was prepared by etching in NH4F solution and investigated by quantitative
analysis of reflection high energy electron diffraction data. The positions of the topmost silicon atoms were found to be very
close to their bulk-like sites. Their displacements can be estimated as y0.01"0.03 A° for the top Si layer and y0.01"0.03
°A
for the second layer. q1998 Elsevier Science B.V. All rights reserved
Keywords :
Silicon , Hydrogen termination , Electron diffraction
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
