Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdSrInSerH–Si 111/

The lattice mismatch at the heterostructure CdSrSi 111.is close to 8%. To relieve the structural stress at this interface, an InSe van der Waals-type buffer layer was grown between the Si substrate and the CdS film. After the Si 111.substrate surface was passivated by hydrogen, the InSe-buffer layer was grown on top by molecular beam epitaxy with high crystalline quality. The lattice orientations of the InSe film are in registry with the Si substrate, as shown by reflection high energy electron diffraction. As seen in the atomic force microscope, the InSe films have roughly the same terrace width of 50–70 nm as the Si substrate due to the wafer miscut. By contrast the step edges of the InSe film are more regular than those of the silicon. The CdS-film was grown on the InSe. The crystal axis of the film is in full registry with the InSe substrate as monitored by reflection high energy electron diffraction. The film morphology is determined as simultaneous growth of multilayers observed by atomic force microscope. q1998 Elsevier Science B.V. All rights reserved.