Direct atomic observation of chemical reaction between silicon carbide and titanium-containing molten alloy

The reaction between Ag–Cu–Ti molten alloy and a SiC substrate was observed in situ using high resolution transmission electron microscopy. SiC dissociation, and TiC nucleation and growth were repeated in the molten alloy, and various formation processes of TiC morphologies were observed. TiC nucleating on the basal plane of the SiC grew and produced a S 3 boundary in contact with preformed TiC. The character of the TiC grain boundary was found to be governed by the SiC structure on which the TiC nucleated. Variation in the TiC orientation was caused by sliding of the 1114plane when the SiC on which the TiC nucleated dissociated. q1998 Elsevier Science B.V. All rights reserved