• Title of article

    Formation of self-organized quantum dots at semiconductor surfaces

  • Author/Authors

    D. Bimberg، نويسنده , , V.A. Shchukin، نويسنده , , N.N. Ledentsov 1، نويسنده , , A. Krost، نويسنده , , F. Heinrichsdorff، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    6
  • From page
    713
  • To page
    718
  • Abstract
    Experimental results and theoretical concepts are reviewed for various mechanisms of self-organization of quantum dot-based nanostructures on semiconductor surfaces, including formation of ordered structures of two-dimensional islands, formation of single-sheet and multi-sheet arrays of three-dimensional islands in lattice-mismatched systems, and formation of quantum dots via phase separation of unstable alloys. Long-range elastic interaction is emphasized to be the common driving force for the formation of both equilibrium structures and kinetically controlled structures. New results are reported on formation of quantum dots due to phase separation of alloys both during the growth and via post-growth annealing. q1998 Elsevier Science B.V. All rights reserved.
  • Keywords
    quantum dots , self-organization , Phase separation of alloys , Elastic strain
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992687