Title of article
Formation of self-organized quantum dots at semiconductor surfaces
Author/Authors
D. Bimberg، نويسنده , , V.A. Shchukin، نويسنده , , N.N. Ledentsov 1، نويسنده , , A. Krost، نويسنده , , F. Heinrichsdorff، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
713
To page
718
Abstract
Experimental results and theoretical concepts are reviewed for various mechanisms of self-organization of quantum
dot-based nanostructures on semiconductor surfaces, including formation of ordered structures of two-dimensional islands,
formation of single-sheet and multi-sheet arrays of three-dimensional islands in lattice-mismatched systems, and formation
of quantum dots via phase separation of unstable alloys. Long-range elastic interaction is emphasized to be the common
driving force for the formation of both equilibrium structures and kinetically controlled structures. New results are reported
on formation of quantum dots due to phase separation of alloys both during the growth and via post-growth annealing.
q1998 Elsevier Science B.V. All rights reserved.
Keywords
quantum dots , self-organization , Phase separation of alloys , Elastic strain
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992687
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