Title of article :
Formation of self-organized quantum dots at semiconductor surfaces
Author/Authors :
D. Bimberg، نويسنده , , V.A. Shchukin، نويسنده , , N.N. Ledentsov 1، نويسنده , , A. Krost، نويسنده , , F. Heinrichsdorff، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
713
To page :
718
Abstract :
Experimental results and theoretical concepts are reviewed for various mechanisms of self-organization of quantum dot-based nanostructures on semiconductor surfaces, including formation of ordered structures of two-dimensional islands, formation of single-sheet and multi-sheet arrays of three-dimensional islands in lattice-mismatched systems, and formation of quantum dots via phase separation of unstable alloys. Long-range elastic interaction is emphasized to be the common driving force for the formation of both equilibrium structures and kinetically controlled structures. New results are reported on formation of quantum dots due to phase separation of alloys both during the growth and via post-growth annealing. q1998 Elsevier Science B.V. All rights reserved.
Keywords :
quantum dots , self-organization , Phase separation of alloys , Elastic strain
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992687
Link To Document :
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