Nanometer-scale InAs islands grown on GaP 001/by organometallic vapor phase epitaxy

We have successfully grown nanometer-scale InAs islands on GaP 001.by low-pressure organometallic vapor phase epitaxy LP-OMVPE.. Effects of substrate temperature and InAs deposition rate on the shape, size and areal density of InAs islands were investigated by ex-situ atomic force microscope AFM.and high-energy electron diffraction HEED.. The AFM observations showed that the island size decreased with the substrate temperature while the areal density increased, indicating that migration play a role on island formation. The HEED patterns provided significant result that the island grown at high temperature 6508C.consisted of a few grains, while the island grown at low temperatures 550 and 5008C. was single crystalline. q1998 Elsevier Science B.V. All rights reserved