InAs nanocrystal growth on Si 100/

We have tried the growth of InAs dots on Si surfaces terminated with hydrogen atoms. It has been confirmed with cross-section transmission electron microscopy XTEM.and field emission scanning electron microscopy FESEM.that high quality InAs nanocrystals can be grown with a high density on Si 100.surfaces terminated with hydrogen atoms. The growth of InAs nanocrystals is initiated with formation of In islands followed by diffusion of As atoms into the In dots. The band discontinuity of the InAsrSi interface has been evaluated using the results of synchrotron radiation photoelectron spectroscopy SRPES.. The offsets for valence band and conduction band are estimated to be 0.31 eV and 0.44 eV, respectively. This result indicates that both holes and electrons can be well confined into InAs nanocrystals. q1998 Elsevier Science B.V. All rights reserved