Below-gap light emission from type II heterointerface of In Al AsrInP system grown on 111/B and 100/InP 0.52 0.48 substrates

Temperature and excitation power dependence of the below-gap emission from type II heterointerface was studied for InAlAsrInP type II heterostructures grown on 111.B and 100. InP substrates. It was found that below 30 K, the photoluminescence PL.intensity of the type II emission of the 111.B sample was comparable to that of the 100.sample, but was 20 times stronger than that of the 100.sample at room temperature. The excitation power dependence of the PL intensity shows that the PL intensity ratio between the 111.B sample and the 100. sample decreases with increasing excitation power. These results can be understood by assuming smaller nonradiative recombination centers at the 111.B heterointerface. q1998 Elsevier Science B.V. All rights reserved.