Title of article
Deposition of tantalum oxide films by ArF excimer laser ablation
Author/Authors
Yukio Nishimura، نويسنده , , Akihiro Shinkawa، نويسنده , , Hiroki Ujita، نويسنده , , Masaharu Tsuji، نويسنده , , Masafumi Nakamura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
22
To page
28
Abstract
Effect of substrate temperatures has been studied for the deposition of tantalum oxide films by ArF excimer laser ablation. Orthorhombic tantalum pentaoxide film (β-Ta2O5) were formed at substrate temperatures above 650°C. Small grains of β-Ta2O5 deposited densely on the film obtained at 700°C. Surface roughness of the films increased with raising substrate temperatures.
Keywords
?-Ta2O5 , Thin film growth , Tantalum oxides , Laser ablation , AFM
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992848
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