Author/Authors :
E. Kondoh، نويسنده , , R.A. Donaton، نويسنده , ,
S. Jin، نويسنده , ,
H. Bender، نويسنده , ,
W. Vandervorst، نويسنده , ,
K. Maex1، نويسنده , , 1، نويسنده ,
Abstract :
Cobalt thin films deposited on SiO2 were processed by rapid thermal annealing. Agglomeration of Co takes place during the annealing, and the formed Co globules penetrate into the SiO2, resulting in crater-like erosion pits. The presence of reaction is evidenced by the formation of a crystalline orthosilicate compound (Co2SiO4). The reaction mechanism is discussed in view of the presence of water at the oxide surface.
