Hydrogen passivation of the Be acceptor in p-InP (100)

Be is the preferred acceptor dopant for InP in beam epitaxial systems. We show that the carrier concentration of Be-doped InP (100) can be compensated by more than four orders of magnitude by diffusion of atomic hydrogen generated by an electron cyclotron resonance plasma source. Capacitance–voltage depth profiling shows effective compensation of the carriers within the first 0.4 μm from the surface. The dissociation energy of the Be–H complex is determined from the reactivation kinetics of the passivated Be acceptor in a back-to-back Schottky diode. The significantly large dissociation energy of 2.57 eV found here suggests the use of hydrogenation as an alternative isolation technique.