High-resolution electron energy loss spectroscopy evidence for electron beam-induced decomposition of trimethylsilane adsorbed on Si(100)

The effects of incident electrons on trimethylsilane ((CH3)3SiH) adsorbed onto Si(100) at 110 K are examined using high-resolution electron energy loss spectroscopy (HREELS) and temperature programmed desorption (TPD). TPD from trimethylsilane-covered Si(100) show hydrogen desorption from silicon monohydride states at 780 K (β1); at high trimethylsilane exposures, two low-temperature (130 K and 155 K) molecular TPD states appear. The absence of silicon dihydride species on the trimethylsilane covered Si(100) surface was demonstrated by comparing the data obtained from this surface with that obtained from disilane-covered Si(100). HREELS and TPD data indicate that carbon deposition on Si(100) is enhanced by irradiating the trimethylsilane covered surface only when the molecular states are present.