Angle-resolved X-ray photoelectron spectroscopy of topmost surface for LaNiO thin film grown on SrTiO substrate by laser 3 3 molecular beam epitaxy

The LaNiO3thin film was grown on SrTiO3 001.substrate by computer-controlled laser molecular beam epitaxy laser MBE.. In situ monitoring of the growing film surface was performed with a reflection high energy electron diffraction RHEED.. Angle-resolved X-ray photoelectron spectroscopy ARXPS.indicated that the terminating plane of the LaNiO3 film was the LaO atomic plane, and the SrTiO3 001.surfaces of as-supplied substrate as well as HF-pretreated substrate were predominantly terminated with TiO atomic plane. The structural conversion of the topmost atomic layer from NiO to LaO occurred during the LaNiO3 epitaxial growth process. q1999 Elsevier Science B.V. All rights reserved.