Sketching of preferred energy regime for ion beam assisted epitaxy

Ion mass-and-energy-dependent displacement defects in surface monolayer and underlying bulk have roughly been separated by a simple numerical evaluation through the binary collision approximation and well-defined threshold of displacement energy for surface and bulk atoms. The simplified form of Kalbitzer’s reduced nuclear stopping power was reasonably introduced for the total energy loss calculation in the interesting energy range of ion to assisted epitaxy. An allowed energy window in which only the surface atom is movable while bulk damage is forbidden has been obtained as a normal consequence. The results are of relevance for the understanding of the microcrystalline and amorphous structure of the films deposited by ion beam assisted epitaxy, especially for multi-ion sources system. q1999 Elsevier Science B.V. All rights reserved.