Title of article :
Epitaxial MnO thin films grown by pulsed laser deposition
Author/Authors :
W. Neubeck، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
195
To page :
198
Abstract :
By using pulsed laser deposition under vacuum from Mn2O3 targets epitaxial MnO thin films have been grown. The substrates used were sapphirew001xand MgOw111x. Best results were achieved at a pressure of 10y4 mbar and at substrate temperatures of 7008C. The films were characterised by using grazing incidence X-ray scattering as well as u–2u Bragg scattering. Part of the characterisation was done with synchrotron radiation at beamline ID20 of the ESRFrGrenoble. The films show lattice parameters close to the bulk ones. The growth direction was found to bew111x. RBS measurements were used to check interdiffusion and film thickness. Typical film thicknesses were from 200 A°up to 3500 A°. These films have been studied by magnetic X-ray scattering experiments at the ESRF. They exhibit antiferromagnetic long range order similar to bulk crystals. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Laser ablation , manganese oxide , thin films , Characterisation , synchrotron
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
992953
Link To Document :
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