Abstract :
FeN films with a nitrogen content of nearly 50 at.% yf1.were prepared by reactive magnetron sputtering. Their y
properties were studied as a function of several sputtering parameters gas-flow rates, substrate temperature and bias
voltage., using ion-beam analytical methods, Mo¨ssbauer spectroscopy as well as transmission electron microscopy TEM.
and X-ray diffraction XRD.. In order to highlight the role of light contaminant elements H,C,O.in the production of
single-phase cubic FeN films, the concentration profiles of all the elements of the films were measured by Time of Flight
Elastic Recoil Detection Analysis TOF-ERDA.. q1999 Elsevier Science B.V. All rights reserved.
