PLD of HgCdTe on two kinds of Si substrate

Films of HgCdTe have been obtained by pulse laser deposition method in dynamic vacuum pressure;10y6 Torr. at 293–543 K. Two different kinds of Si surface were used as substrate: a. flat standard polished 1004 surface and b. anisotropically chemically etched patterned surface. The results of a scanning electron microscopy investigation, electron probe microanalysis and I–V characteristic measurements showed a strong influence of the substrate kind on the morphology, composition, growth mode, growth defects and transport of HgCdTerSi heterostructure. q1999 Elsevier Science B.V. All rights reserved