Title of article
PLD of HgCdTe on two kinds of Si substrate
Author/Authors
M. Kuzma، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
465
To page
470
Abstract
Films of HgCdTe have been obtained by pulse laser deposition method in dynamic vacuum pressure;10y6 Torr. at
293–543 K. Two different kinds of Si surface were used as substrate: a. flat standard polished 1004 surface and b.
anisotropically chemically etched patterned surface. The results of a scanning electron microscopy investigation, electron
probe microanalysis and I–V characteristic measurements showed a strong influence of the substrate kind on the
morphology, composition, growth mode, growth defects and transport of HgCdTerSi heterostructure. q1999 Elsevier
Science B.V. All rights reserved
Keywords
Patterned substrate , HgCdTerSi heterostructure , I–V characteristics , HgCdTe film , Pulse laser deposition , morphology
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995114
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