Structural, optical and electronic subband studies of lattice-matched In Ga As P rInP multiple quantum wells

Double crystal X-ray rocking curve DCRC., secondary ion mass spectroscopy SIMS.and photoluminescence PL. measurements were performed to investigate the structural and optical properties of lattice-matched In0.72Ga0.28As0.61P0.39rInP multiple quantum wells grown by liquid phase epitaxy. The results of the DCRC and SIMS measurements show that the grown sample have high-quality interfaces. PL spectra at low temperature on the In0.72Ga0.28As0.61P0.39rInP multiple quantum well structures show that the sharp excitonic transition from the ground state electronic subband to the ground state heavy-hole subband. The electronic subband energy levels, the corresponding wavefunctions, and dispersion relation in the In0.72Ga0.28As0.61P0.39rInP quantum well structures were calculated by a transfer matrix method. The calculated values for the interband transitions were in reasonable agreement with the excitonic transitions obtained from the PL measurements. These results indicate that these lattice-matched In0.72Ga0.28As0.61P0.39rInP multiple quantum wells hold promise for the potential applications in optoelectronic devices such as long-wavelength lasers with satisfactory quality. q1999 Published by Elsevier Science B.V. All rights reserved.