In composition dependence of lateral ordering in InGaAs quantum dots grown on 311/B GaAs substrates

Self-assembled In Ga As quantum dots QDs.on 311.ArB GaAs surfaces have been grown by molecular beam x 1yx epitaxy MBE.. Spontaneously ordering alignment of In Ga As with lower In content around 0.3 have been observed. x 1yx The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the 311.B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on 100.or 311.A substrates. q1999 Elsevier Science B.V. All rights reserved.