The initial stage of nucleation and growth of Al on HrSi 100/-1=1 by dimethylaluminum hydride vapor deposition

The surface morphology of Al deposition by dimethylaluminum hydride DMAH.vapor on H-terminated Si 100.-1=1 was investigated using scanning tunneling microscope STM.and scanning electron microscope SEM.. Al 110., Al 111. and Al 100. islands can be grown on this surface. Elevated temperatures enhance Al cluster nucleation, but suppress crystalline island growth below a certain critical precursor flux. Al nucleation on the HrSi 100.-2=1, and -3=1 surfaces were compared and discussed. Amorphous clusters can be nucleated on the bare and oxidized Si surfaces. Direct comparison of the Al growth between the HrSi 100.-1=1 and oxidized surfaces was demonstrated by using STM to desorb H locally and create native oxide patterns on the HrSi 100.-1=1 surface. q1999 Elsevier Science B.V. All rights reserved.