Title of article :
Passivation of InP 001/by sulfur
Author/Authors :
A.C. Ferraz، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
We present first-principles total-energy calculations of the InP 001.:S surface. Equilibrium atomic geometries and
energies for In- and P-terminated surfaces, with different degrees of sulfur coverage were determined. We find that all
P-terminated substrate surfaces are less stable than the In-terminated substrate surfaces. Therefore we conclude that
structures with P–S bonds at the surface are less stable than those with In–S bonds. The most stable structure consists of a
In-terminated surface covered with a full monolayer of sulfur, with another half a monolayer of sulfur incorporated into the
second P substrate layer, in agreement with some recent experimental evidence. We also present an analysis of surface band
characters. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
sulfur , Chemisorption , Semiconducting surfaces , Indium phosphide , Density functional calculations , Adatoms
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science