Title of article
Formation of Gd oxide thin films on 111/Si
Author/Authors
Rachel J.C. Chen، نويسنده , , G.H. Shen، نويسنده , , C.J. Tay and L.J. Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
120
To page
123
Abstract
Formation of Gd oxide thin films on 111.Si has been investigated. A complicated multilayered structure was formed in
Gd thin films on 111.Si annealed in O2 ambient. On the other hand, a uniform oxide layer was formed in GdSi2yx films on
111.Si oxidized in O2 ambient. Oxidation mechanisms are discussed. q1999 Published by Elsevier Science B.V. All rights
reserved.
Keywords
silicide , Gd oxide , Gd metal
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995276
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