Formation of Gd oxide thin films on 111/Si

Formation of Gd oxide thin films on 111.Si has been investigated. A complicated multilayered structure was formed in Gd thin films on 111.Si annealed in O2 ambient. On the other hand, a uniform oxide layer was formed in GdSi2yx films on 111.Si oxidized in O2 ambient. Oxidation mechanisms are discussed. q1999 Published by Elsevier Science B.V. All rights reserved.