Preparation and characterisation of mixed oxide Ce,Zr/O thin 2 films on Si 111/ substrates

We have grown thin films of mixed oxides on Si 111.substrates by electron beam evaporation of pressed Ce Zr O x 1yx 2 pellets. The growth was initiated under UHV environment, and proceeded then under O2 atmosphere. A multitechnique approach XPS, AES, LEED, XRD, RBS.was used to characterise the chemical and structural composition of the film as well as their interface with the substrate. The films are about 100 A° thick and present at least two phases corresponding to ZrO2and CeO2. XPS depth profiles showed the following structure, starting from the substrate: a region of interdiffused Zr and Si, a CeSiO layer mixed with ZrO and finally the homogeneous Ce,Zr.O film, enriched in Ce with respect to the x 2 2 pellet. q1999 Elsevier Science B.V. All rights reserved