Preparation of titanium dioxide thin films by means of a hot wall technique

Titanium oxide films were prepared on a Si 100.surface by means of a hot wall technique using titanium iso-propoxide as a source material. It was found that the films could be deposited onto a Si 100.substrate in the temperature range 30–1508C. The growth rate was between 0.03–0.045 A° sy1 depending on the substrate temperature. Although the as-deposited film prepared at a substrate temperature of 1508C has a stoichiometry close to TiO2, it was implied from the XPS spectra that the film is an oxide precursor. Polycrystalline oxide films with anatase were obtained after annealing the as-deposited films at 5008C in air. Capacitance vs. voltage characteristics of the films are also discussed. q1999 Elsevier Science B.V. All rights reserved.